Selection of papers presented at the Symposium 'Semiconductor Lasers: Physics and Technology' : Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures. (17th June 2019)

• Record Type: Journal Article
• Authors: Seredin, P V; Goloshchapov, D L; Zolotukhin, D S; Len'shin, A S; Mizerov, A M; Arsent'ev, I N; Leiste, H; Rinke, M
• Is Part Of: Quantum electronics. Volume 49:Number 6(2019)
• Page Start: 545
• Page End: 551
• Publication Date: 2019-06-17
• Subjects: Quantum electronics -- Periodicals; 537.5
• DOI: 10.1070/QEL17036
• Languages: English
• ISSNs: 1063-7818

Abstract

Abstract: Using plasma-assisted molecular beam epitaxy (PA MBE) of nitrogen, we obtained integrated heterostructures based on a self-ordered array of GaN nanocolumns on Si substrates with a sufficiently uniform distribution of diameters, which subsequently coalesced into a 2D layer. The use of a 'compliant' por-Si substrate for GaN synthesis using PA MBE allowed us to obtain a crack-free GaN layer, prevent the Ga-Si etching process, maintain a sharp smooth Si – GaN interface, and also partially suppress the generation of tensile stresses caused by cooling the heterostructure from growth temperature to room temperature by its relaxation at the Si – GaN nanoporous interface, which had a positive effect on its optical properties in the UV region.