1. (Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics. (18th August 2016) Authors: Du, Wei; Al-Kabi, S.; Ghetmiri, Seyed; Tran, Huong; Pham, Thach; Alharthi, Bader; Mosleh, Aboozar; Margetis, Joe; Tolle, John; Naseem, Hameed A; Mortazavi, Mansour; Sun, Greg; Soref, Richard; Li, B; Yu, Shui-Qing Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 231 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. (Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs. (18th August 2016) Authors: Rosseel, Erik; Dhayalan, Sathish Kumar; Hikavyy, Andriy Yakovitch; Loo, Roger; Profijt, Harald Benjamin; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Gregory; Margetis, Joe; Bhargava, Nupur; Tolle, John Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 347 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. (Invited) Very Low Temperature Epitaxy of Group-IV Semiconductors for Use in FinFET, Stacked Nanowires and Monolithic 3D Integration. (20th July 2018) Authors: Porret, Clement; Hikavyy, Andriy Yakovitch; Gomez Granados, Juan Fernando; Baudot, Sylvain; Vohra, Anurag; Kunert, Bernardette; Douhard, Bastien; Bogdanowicz, Janusz; Schaekers, Marc; Kohen, David; Margetis, Joe; Tolle, John; Lima, Lucas; Sammak, Amir; Scappucci, Giordano; Rosseel, Erik; Langer, ... Journal: ECS transactions Issue: Volume 86:Number 7(2018) Page Start: 163 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. As doping of Si–Ge–Sn epitaxial semiconductor materials on a commercial CVD reactor. (17th August 2017) Authors: Bhargava, Nupur; Margetis, Joe; Tolle, John Journal: Semiconductor science and technology Issue: Volume 32:Number 9(2017:Sep.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Epitaxial GeSn: impact of process conditions on material quality. (16th October 2018) Authors: Loo, Roger; Shimura, Yosuke; Ike, Shinichi; Vohra, Anurag; Stoica, Toma; Stange, Daniela; Buca, Dan; Kohen, David; Margetis, Joe; Tolle, John Journal: Semiconductor science and technology Issue: Volume 33:Number 11(2018:Nov.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Fundamentals of Ge1−xSnx and SiyGe1−x-ySnx RPCVD epitaxy. (1st November 2017) Authors: Margetis, Joe; Mosleh, Aboozar; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Dou, Wei; Du, Wei; Bhargava, Nupur; Yu, Shui-Qing; Profijt, Harald; Kohen, David; Loo, Roger; Vohra, Anurag; Tolle, John Journal: Materials science in semiconductor processing Issue: Volume 70(2017) Page Start: 38 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission. (30th November 2021) Authors: Olorunsola, Oluwatobi; Ojo, Solomon; Abernathy, Grey; Zhou, Yiyin; Amoah, Sylvester; Grant, P C; Dou, Wei; Margetis, Joe; Tolle, John; Kuchuk, Andrian; Du, Wei; Li, Baohua; Zhang, Yong-Hang; Yu, Shui-Qing Journal: Nanotechnology Issue: Volume 33:Number 8(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Strain engineering in epitaxial Ge1−xSnx: a path towards low-defect and high Sn-content layers. (20th November 2017) Authors: Margetis, Joe; Yu, Shui-Qing; Bhargava, Nupur; Li, Baohua; Du, Wei; Tolle, John Journal: Semiconductor science and technology Issue: Volume 32:Number 12(2017:Dec.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinement. (20th September 2018) Authors: Grant, Perry C; Margetis, Joe; Du, Wei; Zhou, Yiyin; Dou, Wei; Abernathy, Grey; Kuchuk, Andrian; Li, Baohua; Tolle, John; Liu, Jifeng; Sun, Greg; Soref, Richard A; Mortazavi, Mansour; Yu, Shui-Qing Journal: Nanotechnology Issue: Volume 29:Number 46(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗