(Invited) Selective Epitaxial Growth of High-P Si:P for Source/Drain Formation in Advanced Si nFETs. (18th August 2016)

• Record Type: Journal Article
• Authors: Rosseel, Erik; Dhayalan, Sathish Kumar; Hikavyy, Andriy Yakovitch; Loo, Roger; Profijt, Harald Benjamin; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Gregory; Margetis, Joe; Bhargava, Nupur; Tolle, John
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 347
• Page End: 359
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0347ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : As contact resistance becomes a bottle-neck in scaled CMOS devices, there is a need for source/drain epitaxy with maximum dopant concentrations and optimized contacting schemes. In this paper we discuss the use of highly doped Si:P layers for the Source/Drain formation in Si bulk FinFETs. We report on the macroscopic and microscopic properties of the Si:P layers and discuss the details of the microstructure and the manifestation of Phosphorus-Vacancy complexes at high Phosphorus concentrations. We analyze how a post-epi thermal budget like spike or laser annealing modifies the microstructure and leads to an enhanced P activation and diffusion. We also zoom in on some of the integration aspects of the Si:P layers and discuss the benefit of the high-P concentration for the contact resistivity and the final device performance.