(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics. (18th August 2016)

• Record Type: Journal Article
• Authors: Du, Wei; Al-Kabi, S.; Ghetmiri, Seyed; Tran, Huong; Pham, Thach; Alharthi, Bader; Mosleh, Aboozar; Margetis, Joe; Tolle, John; Naseem, Hameed A; Mortazavi, Mansour; Sun, Greg; Soref, Richard; Li, B; Yu, Shui-Qing
• Is Part Of: ECS transactions. Volume 75:Number 8(2016)
• Page Start: 231
• Page End: 239
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07508.0231ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : SiGeSn techniques are of great interest in the area of Si photonics mainly due to the compatibility with current Si complementary metal-oxide semiconductor (CMOS) process and the tunable bandgap allowing the optoelectronic devices operation features broad wavelength coverage in near- and mid-infrared ranges. Moreover, the independent engineering of bandgap energy and lattice constant enables the design of SiGeSn-based device to be more flexible. In this work, the following aspects regarding the SiGeSn techniques are investigated: 1) low-defect material growth technique via Chemical Vapor Deposition (CVD) system; 2) advanced material and optical characterizations of SiGeSn alloys; 3) demonstration of SiGeSn-based photoconductors.