Author/Creator: Magnone, P. - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Magnone, P.

1. Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. (September 2018)

Authors:: Magnone, P.; Barletta, G.; Magrì, A.
Journal:: Microelectronics and reliability
Issue:: Volume 88/90(2018)
Page Start:: 438
Record Type:: Journal Article
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2. Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide. (September 2017)

Authors:: Tallarico, A.N.; Reggiani, S.; Magnone, P.; Croce, G.; Depetro, R.; Gattari, P.; Sangiorgi, E.; Fiegna, C.
Journal:: Microelectronics and reliability
Issue:: Volume 76/77(2017)
Page Start:: 475
Record Type:: Journal Article
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3. On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT. (June 2017)

Authors:: Acurio, E.; Crupi, F.; Magnone, P.; Trojman, L.; Meneghesso, G.; Iucolano, F.
Journal:: Solid-state electronics
Issue:: Volume 132(2017)
Page Start:: 49
Record Type:: Journal Article
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4. Understanding the impact of split-gate LDMOS transistors: Analysis of performance and hot-carrier-induced degradation. (November 2021)

Authors:: Magnone, P.; Tallarico, A.N.; Pistollato, S.; Depetro, R.; Croce, G.
Journal:: Solid-state electronics
Issue:: Volume 185(2021)
Page Start:
Record Type:: Journal Article
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