Search

Search Constraints

You searched for: Author/Creator Ma, Xiaohua

Search Results

1. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125 GHz. (7th June 2017)

2. 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Issue 4 (1st February 2014)

5. A 18‐23 GHz power amplifier design using approximate optimal impedance region approach for satellite downlink. Issue 7 (12th April 2021)