300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Issue 4 (1st February 2014)

• Record Type: Journal Article
• Authors: Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue
• Is Part Of: Electronics letters. Volume 50:Issue 4(2014)
• Page Start: 315
• Page End: 316
• Publication Date: 2014-02-01
• Subjects: aluminium compounds -- atomic layer deposition -- etching -- gallium compounds -- III‐V semiconductors -- leakage currents -- MOSFET -- wide band gap semiconductors; normally‐off MOSFET -- high on‐off current ratio -- metal‐oxide semiconductor field‐effect transistor -- self‐terminating gate recess etching technique -- gate dielectric deposition -- atomic layer deposition -- low off‐state leakage current ratio -- low forward gate leakage current ratio -- high‐temperature digital electronics -- temperature 300 degC -- size 15 nm -- voltage 3.2 V -- temperature 293 K to 298 K -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2013.3928
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : 300°C operation of a normally‐off AlGaN/GaN metal‐oxide semiconductor field‐effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self‐terminating gate recess etching technique. At 300°C, by employing a 15 nm‐thick Al2 O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally‐off MOSFET exhibits a threshold voltage ( V th ) of 3.2 V, a low off‐state leakage current of ∼10 −7 A/mm and a low forward gate leakage current of ∼10 −7 A/mm. Thus, a high on/off current ratio of ∼ 10 6 is obtained. Furthermore, the normally‐off MOSFET also exhibits small variations in terms of its V th from room temperature to 300°C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally‐off AlGaN/GaN MOSFET very promising for high‐temperature digital electronics.