71% PAE C‐band GaN power amplifier using harmonic tuning technology. Issue 17 (1st August 2014)

• Record Type: Journal Article
• Authors: Lu, Yang; Cao, Mengyi; Wei, Jiaxing; Zhao, Bochao; Ma, Xiaohua; Hao, Yue
• Is Part Of: Electronics letters. Volume 50:Issue 17(2014)
• Page Start: 1207
• Page End: 1209
• Publication Date: 2014-08-01
• Subjects: III‐V semiconductors -- wide band gap semiconductors -- aluminium compounds -- gallium compounds -- power amplifiers -- high electron mobility transistors; PAE -- high‐efficiency C‐band internally matched power amplifier -- high‐electron mobility transistor -- second harmonic frequency tuning network -- power‐added efficiency -- efficiency 71 percent -- size 12 mm -- power 102 W -- gain 17 dB -- AlGaN‐GaN; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2014.2092
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : A high‐efficiency C‐band internally matched power amplifier, developed with 12 mm AlGaN/GaN high‐electron mobility transistors is described. The second‐harmonic frequency (2 f 0 ) tuning network is applied to confine the impedance at 2 f 0 in safe efficiency regions. The packaged power amplifier achieves 71% power‐added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C‐band GaN power amplifiers reported to date.