1. Detection of false data injection attack in power information physical system based on SVM–GAB algorithm. (August 2022) Authors: Xiong, Xiaoping; Hu, Siding; Sun, Di; Hao, Shaolei; Li, Hang; Lin, Guangyang Journal: Energy reports Issue: Volume 8(2022)Supplement 5 Page Start: 1156 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Effects of N2O surface treatment on the electrical properties of the InAlN/GaN high electron mobility transistors. (3rd December 2019) Authors: Cui, Peng; Zhang, Jie; Yang, Tzu-Yi; Chen, Hang; Zhao, Haochen; Lin, Guangyang; Wei, Lincheng; Xiao, John Q; Chueh, Yu-Lun; Zeng, Yuping Journal: Journal of physics Issue: Volume 53:Number 6(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Fabrication and modeling of SiGe and Ge nanowires on insulator by three-dimensional Ge condensation method. (29th October 2019) Authors: Lin, Guangyang; Liang, Dongxue; Yu, Chunyu; Hong, Haiyang; Mao, Yichen; Li, Cheng; Chen, Songyan; Zeng, Yuping Journal: Semiconductor science and technology Issue: Volume 34:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Fabrication of a polycrystalline SiGe- and Ge-on-insulator by Ge condensation of amorphous SiGe on a SiO2/Si substrate. (29th July 2020) Authors: Lin, Guangyang; Liang, Dongxue; Huang, Zhiwei; Yu, Chunyu; Cui, Peng; Zhang, Jie; Wang, Jianyuan; Xu, Jianfang; Chen, Songyan; Li, Cheng; Zeng, Yuping Journal: Semiconductor science and technology Issue: Volume 35:Number 9(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Fabrication of ordered arrays of GeSn nanodots using anodic aluminum oxide as a template. (1st July 2022) Authors: Gan, Qiuhong; Yu, Jiulong; Liao, Ye; Huang, Wei; Lin, Guangyang; Wang, Jianyuan; Xu, Jianfang; Li, Cheng; Chen, Songyan; Zheng, Jun Journal: Japanese journal of applied physics Issue: Volume 61:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Ge nanobelts with high compressive strain fabricated by secondary oxidation of self-assembly SiGe rings. (30th December 2014) Authors: Lu, Weifang; Li, Cheng; Lin, Guangyang; Wang, Chen; Huang, Shihao; Wei, Jiangbin; Lan, Xiaoling; Chen, Songyan; Ou, Haiyan Journal: Materials research express Issue: Volume 2:Number 1(2015) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg. (4th September 2019) Authors: Cui, Peng; Mercante, Andrew; Lin, Guangyang; Zhang, Jie; Yao, Peng; Prather, Dennis W.; Zeng, Yuping Journal: Applied physics express Issue: Volume 12:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. High-specific-detectivity, low-dark-current Ge nanowire metal–semiconductor–metal photodetectors fabricated by Ge condensation method. (9th January 2020) Authors: Yu, Chunyu; Huang, Zhiwei; Lin, Guangyang; Mao, Yichen; Hong, Haiyang; Zhang, Lu; Zhao, Yimo; Wang, Jianyuan; Huang, Wei; Chen, Songyan; Li, Cheng Journal: Journal of physics Issue: Volume 53:Number 12(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Hydrogen Silsesquioxane (HSQ) Etching Resistance Dependence on Substrate During Dry Etching. Issue 1 (22nd October 2018) Authors: Zhang, Jie; Shariar, Kazy; Lin, Guangyang; Cui, Peng; Zeng, Yuping Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor. Journal: Physica status solidi Issue: Volume 216:Issue 1(2019) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane. (1st January 2016) Authors: Chen, Chaowen; Lin, Guangyang; Lan, Xiaoling; Chen, Ningli; Li, Cheng; Chen, Songyan; Huang, Wei; Lai, Hongkai Journal: ECS journal of solid state science and technology Issue: Volume 5:Number 3(2016) Page Start: P197 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗