High-performance InAlN/GaN HEMTs on silicon substrate with high fT × Lg. (4th September 2019)

• Record Type: Journal Article
• Authors: Cui, Peng; Mercante, Andrew; Lin, Guangyang; Zhang, Jie; Yao, Peng; Prather, Dennis W.; Zeng, Yuping
• Is Part Of: Applied physics express. Volume 12:Number 10(2019)
• Publication Date: 2019-09-04
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/1882-0786/ab3e29
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We report an 80 nm gate-length In0.17 Al0.83 N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 × 10 −7 A mm −1, a record high on/off current ratio of 1.58 × 10 6, and a steep subthreshold swing of 65 mV dec −1, which are excellent features among the reported InAlN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency f T of 200 GHz is achieved, resulting in f T × L g = 16 GHz μ m for GaN HEMTs on Si which to the best of our knowledge is a new record.