1. [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. (September 2016) Authors: Landel, M.; Gautier, C.; Labrousse, D.; Lefebvre, S. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 560 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. [131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors. (September 2016) Authors: Landel, M.; Gautier, C.; Labrousse, D.; Lefebvre, S. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 560 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Aluminum metallization and wire bonding aging in power MOSFET modules. (2018) Authors: Ruffilli, R.; Berkani, M.; Dupuy, P.; Lefebvre, S.; Weber, Y.; Warot-Fonrose, B.; Marcelot, C.; Legros, M. Journal: Materials today Issue: Volume 5:Number 6(2018)Part 3 Page Start: 14641 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Closed space‐filling curves with controlled orientation for 3D printing. (24th May 2022) Authors: Bedel, A.; Coudert‐Osmont, Y.; Martínez, J.; Nishat, R. I.; Whitesides, S.; Lefebvre, S. Journal: Computer graphics forum Issue: Volume 41:Number 2(2022) Page Start: 473 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. (September 2018) Authors: Boige, F.; Richardeau, F.; Lefebvre, S.; Blaquière, J.-M.; Guibaud, G.; Bourennane, A. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 598 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET. Issue 9 (August 2015) Authors: Tala-Ighil, B.; Trolet, J.-L.; Gualous, H.; Mary, P.; Lefebvre, S. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1512 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam. (September 2018) Authors: Pascal, Y.; Labrousse, D.; Petit, M.; Lefebvre, S.; Costa, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 707 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. In-depth investigation of metallization aging in power MOSFETs. Issue 9 (August 2015) Authors: Ruffilli, R.; Berkani, M.; Dupuy, P.; Lefebvre, S.; Weber, Y.; Legros, M. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1966 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. (September 2017) Authors: Boige, F.; Richardeau, F.; Trémouilles, D.; Lefebvre, S.; Guibaud, G. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 500 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Mechanisms of power module source metal degradation during electro-thermal aging. (September 2017) Authors: Ruffilli, R.; Berkani, M.; Dupuy, P.; Lefebvre, S.; Weber, Y.; Legros, M. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 507 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗