Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. (September 2018)

• Record Type: Journal Article
• Authors: Boige, F.; Richardeau, F.; Lefebvre, S.; Blaquière, J.-M.; Guibaud, G.; Bourennane, A.
• Is Part Of: Microelectronics and reliability. Volume 88/90(2018)
• Page Start: 598
• Page End: 603
• Publication Date: 2018-09
• Subjects: Silicon Carbide (SiC) -- Power MOSFET -- Short-circuit -- Reliability -- Failure mode -- Failure analysis; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2018.07.026
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1, 2 kV SiC MOSFETs from different manufacturers including planar and trench-gate structures, well-known or recent devices. Ruggedness and selective failure modes are identified in relation with the power density dissipated by the chip and the simulated 1D-thermal junction. Finally, the chips of the devices which failed in a "fail-to-open" mode have been studied in order to find the physical reasons of this original and unusual fail-safe mode.