Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. (September 2017)

• Record Type: Journal Article
• Authors: Boige, F.; Richardeau, F.; Trémouilles, D.; Lefebvre, S.; Guibaud, G.
• Is Part Of: Microelectronics and reliability. Volume 76/77(2017)
• Page Start: 500
• Page End: 506
• Publication Date: 2017-09
• Subjects: Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2017.06.085
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent device built on silicon, the damage signature is a significant gate current increase but the components are still functional. In order to find the damage location, non-destructive and destructive methods have been carried out. The results converge to a local gate oxide breakdown caused by the important electrical and thermal stress during short-circuit operation leading to different failure mechanisms depending on the device design.