1. A 271.8 nm deep-ultraviolet laser diode for room temperature operation. (7th November 2019) Authors: Zhang, Ziyi; Kushimoto, Maki; Sakai, Tadayoshi; Sugiyama, Naoharu; Schowalter, Leo J.; Sasaoka, Chiaki; Amano, Hiroshi Journal: Applied physics express Issue: Volume 12:Number 12(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection. (1st April 2022) Authors: Zhang, Ziyi; Kushimoto, Maki; Yoshikawa, Akira; Aoto, Koji; Schowalter, Leo J.; Sasaoka, Chiaki; Amano, Hiroshi Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate. (16th April 2021) Authors: Kushimoto, Maki; Zhang, Ziyi; Sugiyama, Naoharu; Honda, Yoshio; Schowalter, Leo J.; Sasaoka, Chiaki; Amano, Hiroshi Journal: Applied physics express Issue: Volume 14:Number 5(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers. (28th July 2021) Authors: Matsukura, Yusuke; Inazu, Tetsuhiko; Pernot, Cyril; Shibata, Naoki; Kushimoto, Maki; Deki, Manato; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 14:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Interface amorphization in hexagonal boron nitride films on sapphire substrate grown by metalorganic vapor phase epitaxy. (5th April 2018) Authors: Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 11:Number 5(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Optically pumped lasing properties of InGaN/GaN stripe multiquantum wells with ridge cavity structure on patterned (001) Si substrates. (29th January 2015) Authors: Kushimoto, Maki; Tanikawa, Tomoyuki; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 8:Number 2(2015:Feb.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations. (8th July 2021) Authors: Nagata, Kengo; Makino, Hiroaki; Miwa, Hiroshi; Matsui, Shinichi; Boyama, Shinya; Saito, Yoshiki; Kushimoto, Maki; Honda, Yoshio; Takeuchi, Tetsuya; Amano, Hiroshi Journal: Applied physics express Issue: Volume 14:Number 8(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED. (1st April 2022) Authors: Matsubara, Taichi; Nagata, Kengo; Kushimoto, Maki; Tomai, Shigekazu; Katsumata, Satoshi; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode. (1st April 2022) Authors: Nagata, Kengo; Anada, Satoshi; Miwa, Hiroshi; Matsui, Shinichi; Boyama, Shinya; Saito, Yoshiki; Kushimoto, Maki; Honda, Yoshio; Takeuchi, Tetsuya; Amano, Hiroshi Journal: Applied physics express Issue: Volume 15:Number 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown. (1st February 2019) Authors: Fukushima, Hayata; Usami, Shigeyoshi; Ogura, Masaya; Ando, Yuto; Tanaka, Atsushi; Deki, Manato; Kushimoto, Maki; Nitta, Shugo; Honda, Yoshio; Amano, Hiroshi Journal: Applied physics express Issue: Volume 12:Number 2(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗