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2. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125 GHz. (7th June 2017)

7. 130 mA mm−1β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts. (22nd June 2021)