Improving light output power of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the optical thickness of p-layers. (28th July 2021)

• Record Type: Journal Article
• Authors: Matsukura, Yusuke; Inazu, Tetsuhiko; Pernot, Cyril; Shibata, Naoki; Kushimoto, Maki; Deki, Manato; Honda, Yoshio; Amano, Hiroshi
• Is Part Of: Applied physics express. Volume 14:Number 8(2021)
• Publication Date: 2021-07-28
• Subjects: Deep-ultraviolet light-emitting diodes -- Optical thickness -- EQE -- WPE -- AlGaN; Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.35848/1882-0786/ac154c
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this study, we investigated the relationship of light output power with the optical thickness of the p-layers in AlGaN-based deep ultraviolet light-emitting diodes with a transparent high-Al-composition p-AlGaN clad layer, a thin p-GaN contact layer, and a reflective p-type electrode. By adjusting the thickness of the transparent high-Al-composition p-AlGaN clad layer, we observed a marked change in light output power. A maximum light output power of 385 mW at 1500 mA, a maximum external quantum efficiency of 15.7% at 10 mA, and a maximum wall-plug efficiency of 15.3% at 10 mA were obtained at an emission wavelength of 275 nm.