A 271.8 nm deep-ultraviolet laser diode for room temperature operation. (7th November 2019)
- Record Type:
- Journal Article
- Title:
- A 271.8 nm deep-ultraviolet laser diode for room temperature operation. (7th November 2019)
- Main Title:
- A 271.8 nm deep-ultraviolet laser diode for room temperature operation
- Authors:
- Zhang, Ziyi
Kushimoto, Maki
Sakai, Tadayoshi
Sugiyama, Naoharu
Schowalter, Leo J.
Sasaoka, Chiaki
Amano, Hiroshi - Abstract:
- Abstract: We present a deep-ultraviolet semiconductor laser diode that operates under current injection at room temperature and at a very short wavelength. The laser structure was grown on the (0001) face of a single-crystal aluminum nitride substrate. The measured lasing wavelength was 271.8 nm with a pulsed duration of 50 ns and a repetition frequency of 2 kHz. A polarization-induced doping cladding layer was employed to achieve hole conductivity and injection without intentional impurity doping. Even with this undoped layer, we were still able to achieve a low operation voltage of 13.8 V at a lasing threshold current of 0.4 A.
- Is Part Of:
- Applied physics express. Volume 12:Number 12(2019)
- Journal:
- Applied physics express
- Issue:
- Volume 12:Number 12(2019)
- Issue Display:
- Volume 12, Issue 12 (2019)
- Year:
- 2019
- Volume:
- 12
- Issue:
- 12
- Issue Sort Value:
- 2019-0012-0012-0000
- Page Start:
- Page End:
- Publication Date:
- 2019-11-07
- Subjects:
- laser diode -- AlN -- ultraviolet
Physics -- Periodicals
Technology -- Periodicals
621.05 - Journal URLs:
- http://iopscience.iop.org/1882-0786/ ↗
http://ioppublishing.org/ ↗ - DOI:
- 10.7567/1882-0786/ab50e0 ↗
- Languages:
- English
- ISSNs:
- 1882-0778
- Deposit Type:
- Legaldeposit
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- Available online (eLD content is only available in our Reading Rooms) ↗
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- British Library DSC - BLDSS-3PM
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- 19320.xml