1. Characteristics of Oxide TFT Using Carbon-Doped Ιn2O3 Thin Film Fabricated by Low-Temperature ALD Using Ethylcyclopentadienyl Indium (Ιn-EtCp) and H2O & O3. (3rd July 2019) Authors: Kobayashi, Riku; Nabatame, Toshihide; Kurishima, Kazunori; Onaya, Takashi; Ohi, Akihiko; Ikeda, Naoki; Nagata, Takahiro; Tsukagoshi, Kazuhito; Ogura, Atsushi Journal: ECS transactions Issue: Volume 92:Number 3(2019) Page Start: 3 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. (20th July 2018) Authors: Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi; Kurishima, Kazunori; Ohi, Akihiko; Ikeda, Naoki; Nagata, Takahiro; Ogura, Atsushi Journal: ECS transactions Issue: Volume 86:Number 6(2018) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Prospectively of Carbon-Doped Indium-Tungsten-Oxide Channel TFT for Bias Stress Instability. (18th August 2016) Authors: Kurishima, Kazunori; Nabatame, Toshihide; Kizu, Takio; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito; Sawada, Tomomi; Ohi, Akihiko; Yamamoto, Ippei; Ohishi, Tomoji; Chikyow, Toyohiro; Ogura, Atsushi Journal: ECS transactions Issue: Volume 75:Number 10(2016) Page Start: 149 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Reliability of Al2O3/In-Si-O-C Thin-Film Transistors with an Al2O3 Passivation Layer under Gate-Bias Stress. (23rd July 2018) Authors: Kurishima, Kazunori; Nabatame, Toshihide; Onaya, Takashi; Tsukagoshi, Kazuhito; Ohi, Akihiko; Ikeda, Naoki; Nagata, Takahiro; Ogura, Atsushi Journal: ECS transactions Issue: Volume 86:Number 11(2018) Page Start: 135 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Role of High-k Interlayer in ZrO2/High-k/ZrO2 Insulating Multilayer on Electrical Properties for DRAM Capacitor. (18th August 2016) Authors: Onaya, Takashi; Nabatame, Toshihide; Sawada, Tomomi; Kurishima, Kazunori; Sawamoto, Naomi; Ohi, Akihiko; Chikyow, Toyohiro; Ogura, Atsushi Journal: ECS transactions Issue: Volume 75:Number 8(2016) Page Start: 667 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗