Prospectively of Carbon-Doped Indium-Tungsten-Oxide Channel TFT for Bias Stress Instability. (18th August 2016)

• Record Type: Journal Article
• Authors: Kurishima, Kazunori; Nabatame, Toshihide; Kizu, Takio; Mitoma, Nobuhiko; Tsukagoshi, Kazuhito; Sawada, Tomomi; Ohi, Akihiko; Yamamoto, Ippei; Ohishi, Tomoji; Chikyow, Toyohiro; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 75:Number 10(2016)
• Page Start: 149
• Page End: 156
• Publication Date: 2016-08-18
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/07510.0149ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We studied characteristic of carbon-doped indium-tungsten-oxide (In1-x Wx OC) thin film transistors (TFTs) with SiO2 gate insulator. The In1-x Wx OC films, were fabricated by co-sputtering method with WC and In2 O3 targets, had an amorphous structure and maintained W-C bond even after annealing at 300 °C. The saturation field-effect mobility, on/off current ratio and subthreshold swing values of the In0.96 W0.04 OC TFT were 5.6 cm 2 /Vs, 1.0 × 10 9 and 0.52 V/decade, respectively. To effect of doped carbon in In1-x Wx OC channel on reliability of transistor properties, we compared the turn on voltage shift (Δ V on ) behavior between the In0.96 W0.04 OC and In0.98 W0.02 O TFTs under positive gate bias stress (PBS) and negative gate bias stress (NBS). The Δ V on of the In0.96 W0.04 OC TFT was always smaller than that of In0.98 W0.02 O TFT under PBS. Moreover, it is clear that the Δ V on (~ 0 V) of In0.96 W0.04 OC TFT was improved significantly compared to that (-0.5 V) of In0.98 W0.02 O TFT under the NBS of 5000 s. We concluded that the In1-x Wx OC film is one of the promising candidates as InOx -based metal oxide semiconductor channel material.