Ferroelectricity of HfxZr1−xO2 Thin Films Fabricated Using TiN Stressor and ZrO2 Nucleation Techniques. (20th July 2018)

• Record Type: Journal Article
• Authors: Onaya, Takashi; Nabatame, Toshihide; Sawamoto, Naomi; Kurishima, Kazunori; Ohi, Akihiko; Ikeda, Naoki; Nagata, Takahiro; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 86:Number 6(2018)
• Page Start: 31
• Page End: 38
• Publication Date: 2018-07-20
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08606.0031ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We studied the ferroelectricity and the leakage current ( J ) properties of two types of the MFM capacitors such as the TiN/ZrO2 /Hfx Zr1−x O2 /ZrO2 /TiN capacitor (D-ZrO2 ) with the ZrO2 nucleation layers, comparing to the TiN/Hfx Zr1−x O2 /TiN capacitor (D-TiN) with the TiN stressor layers. The larger ferroelectric phase ratio was achieved by the epitaxial like grain growth of the Hfx Zr1−x O2 film on the surface of the top- and bottom-ZrO2 nucleation layers. Thus, the larger remanent polarization (2 P r = 29 µC/cm 2 ) of D-ZrO2 was obtained compared to that (24 µC/cm 2 ) of D-TiN. Moreover, the J value of D-ZrO2 was approximately one order of magnitude lower than that of D-TiN. Therefore, these results suggest that the superior ferroelectricity of HZO film can be obtained using the ZrO2 nucleation technique instead of the TiN stressor technique.