1. A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors. (15th January 2021) Authors: Fukuda, Koichi; Hattori, Junichi; Asai, Hidehiro; Yaita, Junya; Kotani, Junji Journal: Japanese journal of applied physics Issue: Volume 60:Number SB(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Advantages of the AlGaN spacer in InAlN high-electron-mobility transistors grown using metalorganic vapor phase epitaxy. (4th April 2016) Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Tomabechi, Shuichi; Nakamura, Norikazu; Watanabe, Keiji Journal: Japanese journal of applied physics Issue: Volume 55:Number 5(2016:May)Supplement Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Cellular automaton approach for carrier degeneracy effects on the electron mobility of high electron mobility transistors. (1st May 2022) Authors: Fukuda, Koichi; Hattori, Junichi; Asai, Hidehiro; Ninomiya, Mariko; Yaita, Junya; Kotani, Junji Journal: Japanese journal of applied physics Issue: Volume 61:Number SC(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Direct observation of nanometer‐scale gate leakage paths in AlGaN/GaN and InAlN/AlN/GaN HEMT structures. Issue 4 (21st January 2016) Authors: Kotani, Junji; Yamada, Atsushi; Ishiguro, Tetsuro; Tomabechi, Shuichi; Nakamura, Norikazu Journal: Physica status solidi Issue: Volume 213:Issue 4(2016:Apr.) Page Start: 883 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer. (10th November 2017) Authors: Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu Journal: Japanese journal of applied physics Issue: Volume 57:Number 1(2018)Supplement 1 Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere. (1st July 2022) Authors: Yamada, Atsushi; Yaita, Junya; Kotani, Junji Journal: Japanese journal of applied physics Issue: Volume 61:Number 7(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm−1 output power density. (18th March 2021) Authors: Ozaki, Shiro; Yaita, Junya; Yamada, Atsushi; Kumazaki, Yusuke; Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Nakamura, Norikazu; Kotani, Junji Journal: Applied physics express Issue: Volume 14:Number 4(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process. (1st March 2022) Authors: Minoura, Yuichi; Ohki, Toshihiro; Okamoto, Naoya; Sato, Masaru; Ozaki, Shiro; Yamada, Atsushi; Kotani, Junji Journal: Applied physics express Issue: Volume 15:Number 3(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation. (14th June 2021) Authors: Yaita, Junya; Yamada, Atsushi; Kotani, Junji Journal: Japanese journal of applied physics Issue: Volume 60:Number 7(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers. Issue 4 (20th February 2023) Authors: Kotani, Junji; Makiyama, Kozo; Ohki, Toshihiro; Ozaki, Shiro; Okamoto, Naoya; Minoura, Yuichi; Sato, Masaru; Nakamura, Norikazu; Miyamoto, Yasuyuki Journal: Electronics letters Issue: Volume 59:Issue 4(2023) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗