1. A dielectrically modulated electrically doped tunnel FET for application of label free biosensor. (September 2017) Authors: Venkatesh, Pulimamidi; Nigam, Kaushal; Pandey, Sunil; Sharma, Dheeraj; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 109(2017) Page Start: 470 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A dual-band RF energy harvesting circuit using 4th order dual-band matching network. Issue 1 (1st January 2017) Authors: Agrawal, Sachin; Parihar, Manoj S.; Kondekar, P.N. Editors: Meng, Wei Journal: Cogent engineering Issue: Volume 4:Issue 1(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A novel dynamically configurable electrostatically doped silicon nanowire impact ionization MOS. (December 2015) Authors: Singh, Sangeeta; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 88(2015) Page Start: 695 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET. (May 2016) Authors: Singh, Sangeeta; Sinha, Ruchir; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 40 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. A novel ultra steep dynamically reconfigurable electrostatically doped silicon nanowire Schottky Barrier FET. (May 2016) Authors: Singh, Sangeeta; Sinha, Ruchir; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 93(2016) Page Start: 40 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors. (November 2017) Authors: Sharma, Dheeraj; Singh, Deepika; Pandey, Sunil; Yadav, Shivendra; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 111(2017) Page Start: 767 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Design and investigation of double gate Schottky barrier MOSFET using gate engineering. (1st December 2015) Authors: Kale, Sumit; Kondekar, P.N. Journal: Micro & nano letters Issue: Volume 10:Number 12(2015) Page Start: 707 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Dopingless super‐steep impact ionisation MOS (dopingless‐IMOS) based on work‐function engineering. Issue 12 (1st June 2014) Authors: Singh, S.; Kondekar, P.N. Journal: Electronics letters Issue: Volume 50:Issue 12(2014) Page Start: 888 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Ferroelectric Schottky barrier tunnel FET with gate-drain underlap: Proposal and investigation. (January 2016) Authors: Kale, Sumit; Kondekar, P.N. Journal: Superlattices and microstructures Issue: Volume 89(2016) Page Start: 225 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Insights into the operation of negative capacitance FinFET for low power logic applications. (January 2022) Authors: Jaisawal, Rajeewa Kumar; Kondekar, P.N.; Yadav, Sameer; Upadhyay, Pranshoo; Awadhiya, Bhaskar; Rathore, Sunil Journal: Microelectronics journal Issue: Volume 119(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗