Design and investigation of double gate Schottky barrier MOSFET using gate engineering. (1st December 2015)

• Record Type: Journal Article
• Authors: Kale, Sumit; Kondekar, P.N.
• Is Part Of: Micro & nano letters. Volume 10:Number 12(2015)
• Page Start: 707
• Page End: 711
• Publication Date: 2015-12-01
• Subjects: MOSFET -- Schottky barriers -- silicon -- elemental semiconductors -- work function -- tunnelling; double gate Schottky barrier MOSFET -- gate engineering -- isolated gates -- control gate -- n‐type region -- source/drain contact‐channel interfaces -- ultrathin intrinsic silicon channel -- work‐function metal N‐gates -- Schottky barrier height -- tunnelling barrier -- carrier injection -- random dopant fluctuations -- Si; Nanotechnology -- Periodicals; Nanostructures -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1049/mnl.2015.0046
• Languages: English
• ISSNs: 1750-0443

Abstract

Abstract : For the first time, a distinctive approach to design and investigate double‐gate Schottky Barrier MOSFET (DG SB‐MOSFET) using gate engineering is reported. Three isolated gates (one Control gate and two N ‐gates) of different work‐functions on both sides of the gate oxides have been used. In the proposed device, without the need of doping, n ‐type region is formed at the source/drain contact‐channel interfaces by inducing electron in the ultrathin intrinsic silicon channel using appropriate work‐function metal N ‐gates. Using N ‐gates, the Schottky barrier height and tunnelling barrier width have been modulated to enhance the carrier injection similar to conventional dopant segregated (DS) SB‐MOSFET. Moreover, the proposed DG SB‐MOSFET behaves such as a conventional DS SB‐MOSFET. The proposed device is expected to be free from variability caused by random dopant fluctuations. Furthermore, it offers simplified process flow with relaxing the need of doping to form dopant segregation layer and increased immunity to device variability.