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2. Erratum: Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy [Phys. Status Solidi C 4, 2423–2427 (2007)]. Issue 2 (14th February 2013)

6. Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization. (9th June 2016)

7. Quantum‐Confinement‐Enhanced Thermoelectric Properties in Modulation‐Doped GaAs–AlGaAs Core–Shell Nanowires. Issue 4 (9th December 2019)

9. Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth (Adv. Mater. 13/2015). (April 2015)