Growth and properties of InGaAs nanowires on silicon. Issue 1 (2nd December 2013)

• Record Type: Journal Article
• Authors: Koblmüller, Gregor; Abstreiter, Gerhard
• Is Part Of: Physica status solidi. Volume 8:Issue 1(2014:Jan.)
• Page Start: 11
• Page End: 30
• Publication Date: 2013-12-02
• Subjects: Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201308207
• Languages: English
• ISSNs: 1862-6254

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>Free‐standing ternary InGaAs nanowires (NW) are at the core of intense investigations due to their integration capabilities on silicon (Si) for next‐generation photovoltaics, integrated photonics, tunneling devices, and high‐performance gate all‐round III–V/Si NW transistors. In this review, recent progress on the growth, structural, optical and electrical properties of InGaAs NWs on Si substrate is highlighted. Particular focus is on a comparison between conventional catalyst‐assisted and catalyst‐free growth methods as well as self‐assembled versus site‐selectively grown NW arrays. It will be shown that catalyst‐free, high‐periodicity NW arrays with extremely high compositional uniformity are mandatory to allow un‐ambiguous structure–property correlation measurements. Here, interesting insights into the electronic/optical properties of wurtzite, zincblende and mixed crystal phases of InGaAs will be highlighted based on recent photoluminescence spectroscopy data. Finally, the InGaAs NW‐on‐Si system is also discussed in the realms of heterojunction properties, providing a promising system for steep‐slope tunneling field effect transistors in future low‐power post‐CMOS intergrated microelectronics and broad‐band photoabsorption and detec‐tion devices. (© 2014 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</p> </abstract>