Semiconductor Nanowires: Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth (Adv. Mater. 13/2015). (April 2015)

• Record Type: Journal Article
• Authors: Loitsch, Bernhard; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Grimaldi, Gianluca; Hanschke, Lukas; Matich, Sonja; Parzinger, Eric; Wurstbauer, Ursula; Abstreiter, Gerhard; Finley, Jonathan J.; Koblmüller, Gregor
• Is Part Of: Advanced materials. Volume 27:Number 13(2015)
• Page Start: 2125
• Page End: 2125
• Publication Date: 2015-04
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201570086
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201570086-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p>On page 2195, G. Koblmüller and co‐workers demonstrate a unique reverse‐reaction growth scheme to realize ultrathin GaAs nanowires epitaxially on Si. Correlated structural and optical experiments reveal huge blue‐shifted photoluminescence (up to ∼100 meV) with decreasing nanowire diameter, in sound agreement with theoretical calculations of radial quantum confinement. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjf4gf0rm" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>