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1. A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition. Issue 5 (1st April 2021)

2. A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition. Issue 5 (1st April 2021)

3. High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor. Issue 37 (8th September 2020)

4. Hollow Cathode Plasma (HCP) Enhanced Atomic Layer Deposition of Silicon Nitride (SiNx) Thin Films Using Pentachlorodisilane (PCDS). (23rd April 2019)

5. Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. (8th September 2020)

6. Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications. Issue 5 (17th May 2021)

7. Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications. Issue 5 (17th May 2021)

8. Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications. Issue 5 (24th February 2021)

9. Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications. Issue 5 (24th February 2021)