Improvement of Ferroelectricity and Fatigue Property of Thicker HfxZr1−XO2/ZrO2 Bi-layer. (8th September 2020)

• Record Type: Journal Article
• Authors: Onaya, Takashi; Nabatame, Toshihide; Inoue, Mari; Jung, Yong Chan; Hernandez-Arriaga, Heber; Mohan, Jaidah; Kim, Harrison Sejoon; Sawamoto, Naomi; Nagata, Takahiro; Kim, Jiyoung; Ogura, Atsushi
• Is Part Of: ECS transactions. Volume 98:Number 3(2020)
• Page Start: 63
• Page End: 70
• Publication Date: 2020-09-08
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/09803.0063ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : We studied the ferroelectricity of the metal–ferroelectric–metal capacitors with a Hfx Zr1−x O2 (10 nm) (HZO) single layer, and Hfx Zr1−x O2 (10 nm)/ZrO2 (10 nm) (HZO/ZO) and Hfx Zr1−x O2 (10 nm)/HfO2 (10 nm) (HZO/HO) bi-layers. HZO/ZO and HZO exhibited high remanent polarization (2 P r = P r + − P r − ) of 13 and 12 µC/cm 2, respectively, compared to HZO/HO (0.5 µC/cm 2 ) after 10 4 wake-up cycles. This is due to the difference of the amount of ferroelectric orthorhombic phase. We found that the breakdown voltage of HZO/ZO was approximately 1.5 times higher than that of HZO while maintaining a high 2 P r value. Moreover, HZO/ZO kept 1.4 times higher 2 P r value than HZO after 10 6 switching cycles because the phase transformation from anti-ferroelectric to ferroelectric phase of ZrO2 layer in HZO/ZO could occur during field cycling. Therefore, HZO/ZO bi-layer using the combination of HZO and ZrO2 layers is one of the promising ferroelectric layer for future ferroelectric devices application.