Ozone based high-temperature atomic layer deposition of SiO2 thin films. (6th March 2020)

• Record Type: Journal Article
• Authors: Hwang, Su Min; Qin, Zhiyang; Kim, Harrison Sejoon; Ravichandran, Arul; Jung, Yong Chan; Kim, Si Joon; Ahn, Jinho; Hwang, Byung Keun; Kim, Jiyoung
• Is Part Of: Japanese journal of applied physics. Volume 59:Number SI(2020)
• Publication Date: 2020-03-06
• Subjects: silicon oxide -- hexachlorodisilane (HCDS) -- atomic layer deposition (ALD) -- cold-wall chamber; Physics -- Periodicals; 621.05
• DOI: 10.35848/1347-4065/ab78e4
• Languages: English
• ISSNs: 0021-4922

Abstract

Abstract: In this paper, atomic layer deposition of SiO2 thin films was investigated with Si2 Cl6 and O3 /O2 (400 g m −3 ). O3 /O2 is not preferred for high-temperature (>400 °C) processes due to its lower decomposition temperature, especially in a furnace-type chamber. However, with Si oxidation test using a cold-wall chamber, we have demonstrated the reactivity of O3 /O2 up to 800 °C in comparison with O2 and H2 O. The ALD of SiO2 films was examined at deposition temperatures from 500 °C to 700 °C. The growth rate at 600 °C was saturated to 0.03 nm/cycle with Si2 Cl6 exposure over 1.2 × 10 5 L. O3 /O2 also showed ALD-like saturation behaviors for exposures over 2.4 × 10 6 L. The ALD films deposited at 600 °C exhibited relatively smooth surface roughness (<0.18 nm) and low wet etch rate (1.6 nm min −1, 500:1 HF) that are comparable with PECVD SiO2 deposited at 250 °C and LPCVD SiO2 deposited at 450 °C.