1. Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport. (April 2018) Authors: Oproglidis, T.A.; Karatsori, T.A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 142(2018) Page Start: 25 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Drain current local variability from linear to saturation region in 28 nm bulk NMOSFETs. (February 2017) Authors: Karatsori, T.A.; Theodorou, C.G.; Haendler, S.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 128(2017) Page Start: 31 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction. (September 2015) Authors: Karatsori, T.A.; Theodorou, C.G.; Ioannidis, E.G.; Haendler, S.; Josse, E.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 111(2015) Page Start: 123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. (January 2016) Authors: Messaris, I.; Karatsori, T.A.; Fasarakis, N.; Theodorou, C.G.; Nikolaidis, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Microelectronics and reliability Issue: Volume 56(2016) Page Start: 10 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs. Issue 17 (1st August 2016) Authors: Karatsori, T.A.; Theodorou, C.G.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Electronics letters Issue: Volume 52:Issue 17(2016) Page Start: 1492 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Leakage current conduction in metal gate junctionless nanowire transistors. (May 2017) Authors: Oproglidis, T.A.; Karatsori, T.A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C.A. Journal: Solid-state electronics Issue: Volume 131(2017) Page Start: 20 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Novel on-resistance based methodology for MOSFET electrical characterization. (June 2020) Authors: Karatsori, T.A.; Bennamane, K.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 168(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs. (May 2018) Authors: Karatsori, T.A.; Pastorek, M.; Theodorou, C.G.; Fadjie, A.; Wichmann, N.; Desplanque, L.; Wallart, X.; Bollaert, S.; Dimitriadis, C.A.; Ghibaudo, G. Journal: Solid-state electronics Issue: Volume 143(2018) Page Start: 56 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗