Novel on-resistance based methodology for MOSFET electrical characterization. (June 2020)

• Record Type: Journal Article
• Authors: Karatsori, T.A.; Bennamane, K.; Ghibaudo, G.
• Is Part Of: Solid-state electronics. Volume 168(2020)
• Publication Date: 2020-06
• Subjects: MOSFET -- Parameter extraction -- On-resistance; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2019.107722
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: A new methodology for MOSFET characterization making use of the on-resistance characteristics Ron (Vg, Vd ) = Vd /Id (Vg, Vd ) and associated derivatives dRon /dVg and dRon /dVd is proposed. This approach enables to eliminate the influence of source-drain series resistance Rsd not only in linear region but also in non-linear region of MOSFET operation. Therefore, it allows for intrinsic MOSFET parameter extraction free from source and drain series resistance.