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6. GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth. Issue 7 (21st October 2019)

8. Growth properties and electrochemical characterization of InGaN photoanodes with different In concentrations. Issue 3 (22nd January 2014)

10. Impact of synthesis temperature and precursor ratio on the crystal quality of MOCVD WSe2 monolayers. (14th May 2023)