Advanced thin‐film chip concepts for efficient InGaN solar cells. Issue 9 (8th May 2015)

• Record Type: Journal Article
• Authors: Koch, Holger; Niebling, Tobias; Pietzonka, Ines; Scholz, Dominik; Kalisch, Holger; Vescan, Andrei; Lugauer, Hans‐Jürgen
• Is Part Of: Physica status solidi. Volume 212:Issue 9(2015:Sep.)
• Page Start: 2053
• Page End: 2058
• Publication Date: 2015-05-08
• Subjects: chip technology -- concentrated photovoltaic -- InGaN -- nitride -- solar cell; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201532064
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract: Two chip concepts based on thin‐film technology are presented and compared regarding their suitability for concentrating photovoltaic applications. The main difference is given by the n‐contact design: the first concept relies on a metal grid (MG) while the second one is based on vias (V) connected from the bottom of the solar cell. Although the MG‐chip demonstrated a better performance at low solar concentrations, the V‐chip was found to be more efficient at high concentrations being the relevant operation range for InGaN‐based solar cell applications. Detailed investigations of J – V characteristics applying varied light concentrations revealed a significantly lower series resistance as the main advantage of the V‐concept leading to considerably better fill factors at high solar concentrations.