Growth properties and electrochemical characterization of InGaN photoanodes with different In concentrations. Issue 3 (22nd January 2014)

• Record Type: Journal Article
• Authors: Finken, Matthias; Wille, Ada; Reuters, Benjamin; Holländer, Bernd; Heuken, Michael; Kalisch, Holger; Vescan, Andrei
• Other Names: Eddy, Jr. Charles R. "Chip" sponsoringEditor.; Kuball Martin sponsoringEditor.; Koleske Daniel D. sponsoringEditor.; Amano Hiroshi sponsoringEditor.
• Is Part Of: Physica status solidi. Volume 11:Issue 3/4(2014:Apr.)
• Page Start: 746
• Page End: 749
• Publication Date: 2014-01-22
• Subjects: InGaN -- photoelectrolysis -- hydrogen generation -- water splitting -- In concentration; Solid state physics -- Congresses; Solid state physics -- Periodicals; Solid state physics; Conference proceedings; Periodicals; 530.41
• DOI: 10.1002/pssc.201300414
• Languages: English
• ISSNs: 1862-6351

Abstract

Abstract: The generation of hydrogen via the photochemical electrolysis of water by employing a semiconductor photoelectrode is a promising approach for a renewable energy source. In this work, InGaN layers grown by metal‐organic vapour phase epitaxy (MOVPE). Different In concentrations were achieved by variation of the growth temperature between 800 °C and 720 °C. The properties of the layers were investigated by high‐resolution X‐ray diffraction (HRXRD), Rutherford backscattering spec‐trometry (RBS) and atomic force microscopy (AFM). The maximum In concentration at the GaN/InGaN interface is 11%. A further increase towards the surface at lower growth temperatures is achieved by relaxation. This causes a change in the growth mode from 2D to 3D and an overall decrease of crystal quality. Additionally, two Si‐doped InGaN layers were grown with In contents of 7% and 25% to investigate its influence on properties of a photoanode. The photoanodes were electrochemically examined via chronoamperometry in a three‐electrode configuration. It is shown that at low voltages EWE between working electrode and reference electrode, the photocurrent of the sample with 7% In is higher, whereas for voltages above 0.8 V, it is vice versa. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)