11. FEM-aided damage model calibration method for experimental results. (November 2020) Authors: Fogsgaard, M.B.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
12. Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs. (September 2019) Authors: Ceccarelli, L.; Bahman, A.S.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
13. Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules. (September 2019) Authors: Du, H.; Ceccarelli, L.; Iannuzzo, F.; Reigosa, P.D. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
14. Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. (September 2018) Authors: Ceccarelli, L.; Luo, H.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 627 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
15. Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. (September 2018) Authors: Davari, P.; Kristensen, O.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 545 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
16. Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. (September 2018) Authors: Du, H.; Reigosa, P.D.; Iannuzzo, F.; Ceccarelli, L. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 661 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
17. Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation. Issue 9 (August 2015) Authors: Choi, U.M.; Blaabjerg, F.; Iannuzzo, F.; Jørgensen, S. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 2022 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
18. Mission-profile-based stress analysis of bond-wires in SiC power modules. (September 2016) Authors: Bahman, A.S.; Iannuzzo, F.; Blaabjerg, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 419 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
19. Mission-profile-based stress analysis of bond-wires in SiC power modules. (September 2016) Authors: Bahman, A.S.; Iannuzzo, F.; Blaabjerg, F. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 419 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
20. Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring. (November 2020) Authors: Loghmani Moghaddam Toussi, A.; Bahman, A.S.; Iannuzzo, F.; Blaabjerg, F. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗