1. A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode. (November 2020) Authors: Susinni, G.; Rizzo, S.A.; Iannuzzo, F.; Raciti, A. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis. (September 2017) Authors: Ceccarelli, L.; Reigosa, P.D.; Iannuzzo, F.; Blaabjerg, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 272 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Advanced power cycler with intelligent monitoring strategy of IGBT module under test. (September 2017) Authors: Choi, U.M.; Blaabjerg, F.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Capacitive effects in IGBTs limiting their reliability under short circuit. (September 2017) Authors: Reigosa, P.D.; Iannuzzo, F.; Rahimo, M.; Blaabjerg, F. Journal: Microelectronics and reliability Issue: Volume 76/77(2017) Page Start: 485 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. (September 2016) Authors: Reigosa, P.D.; Prindle, D.; Pâques, G.; Geissmann, S.; Iannuzzo, F.; Kopta, A.; Rahimo, M. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 524 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT. (September 2016) Authors: Reigosa, P.D.; Prindle, D.; Pâques, G.; Geissmann, S.; Iannuzzo, F.; Kopta, A.; Rahimo, M. Journal: Microelectronics and reliability Issue: Volume 64(2016) Page Start: 524 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis. (November 2020) Authors: Du, H.; Letz, S.; Baker, N.; Goetz, T.; Iannuzzo, F.; Schletz, A. Journal: Microelectronics and reliability Issue: Volume 114(2020) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method. (September 2019) Authors: Ceccarelli, L.; Wu, R.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 100/101(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Issue 9 (August 2015) Authors: Abbate, C.; Busatto, G.; Iannuzzo, F.; Mattiazzo, S.; Sanseverino, A.; Silvestrin, L.; Tedesco, D.; Velardi, F. Journal: Microelectronics and reliability Issue: Volume 55:Issue 9/10(2015) Page Start: 1496 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. (September 2018) Authors: Bahman, A.S.; Jensen, S.M.; Iannuzzo, F. Journal: Microelectronics and reliability Issue: Volume 88/90(2018) Page Start: 304 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗