1. (Invited) Investigations and Improvements of AlInN/GaN HEMTs Grown on Si. (13th April 2015) Authors: Chyi, Jen-Inn; Hsin, Yue-Ming; Lee, Geng-Yen; Chiu, Hsien-Chin Journal: ECS transactions Issue: Volume 66:Number 1(2015) Page Start: 217 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. AlGaN/GaN High Electron Mobility Transistors with a p-GaN Backgate Structure. (9th April 2018) Authors: Lin, Wei-Tse; Lin, Wei-Chun; Zhong, Yi Nan; Hsin, Yue-Ming Journal: ECS transactions Issue: Volume 85:Number 7(2018) Page Start: 49 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer. (9th April 2018) Authors: Tsai, Hsin-Chang; Fan Chiang, Shao-Chi; Zhong, Yi Nan; Hsin, Yue-Ming Journal: ECS transactions Issue: Volume 85:Number 7(2018) Page Start: 53 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer. (28th December 2017) Authors: Hsu, Che-Ching; Shen, Pei-Chien; Zhong, Yi-Nan; Hsin, Yue-Ming Journal: MRS advances Issue: Volume 3:Number 3(2018) Page Start: 143 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers. Issue 8 (14th May 2015) Authors: Liao, Wen-Chia; Chen, Cheng-Hsin; Hsu, Chia-Wei; Hsin, Yue-Ming; Chyi, Jen-Inn Journal: Journal of the Electrochemical Society Issue: Volume 162:Issue 8(2015) Page Start: H522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Analysis of Threshold Voltage Shift in AlGaN/GaN Heterostructure Field-Effect Transistors with Different Buffer Layers. Issue 8 (1st January 2015) Authors: Liao, Wen-Chia; Chen, Cheng-Hsin; Hsu, Chia-Wei; Hsin, Yue-Ming; Chyi, Jen-Inn Journal: Journal of the Electrochemical Society Issue: Volume 162:Issue 8(2015) Page Start: H522 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs. (28th December 2021) Authors: Tsai, Wen-Shiuan; Qin, Zhen-Wei; Hsin, Yue-Ming Journal: ECS journal of solid state science and technology Issue: Volume 10:Number 12(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. (19th June 2019) Authors: Lin, Wei-Chun; Zhong, Yi-Nan; Tsai, Ming-Yan; Ho, Wei-Cheng; Yu, Yi-Hsuan; Hsin, Yue-Ming Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Direct Current Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Different Channel Widths. (1st January 2019) Authors: Lin, Wei-Chun; Zhong, Yi-Nan; Tsai, Ming-Yan; Ho, Wei-Cheng; Yu, Yi-Hsuan; Hsin, Yue-Ming Journal: ECS journal of solid state science and technology Issue: Volume 8:Number 6(6019) Page Start: Q123 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. GaAsSb/InGaAs heterojunction tunnel field-effect transistors with a heterogeneous channel. (7th February 2018) Authors: Lin, Chun-Wei; Chen, Hung-Ru; Yu, Yu-Tzu; Hsin, Yue-Ming Journal: Japanese journal of applied physics Issue: Volume 57:Number 3(2018) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗