AlGaN/GaN High Electron Mobility Transistors with a p-Type GaN Cap Layer. (9th April 2018)

• Record Type: Journal Article
• Authors: Tsai, Hsin-Chang; Fan Chiang, Shao-Chi; Zhong, Yi Nan; Hsin, Yue-Ming
• Is Part Of: ECS transactions. Volume 85:Number 7(2018)
• Page Start: 53
• Page End: 57
• Publication Date: 2018-04-09
• Subjects: Electrochemistry -- Periodicals; Electrochemistry; Periodicals; Electronic journals; Electronic journal; 541.37
• DOI: 10.1149/08507.0053ecst
• Languages: English
• ISSNs: 1938-5862

Abstract

Abstract : In this work, AlGaN/GaN HEMTs with different types of p-GaN cap layers were fabricated and investigated. The p-GaN cap layer used in this study was for passivation study instead of forming enhancement-mode operation. The differences in p-GaN cap layers were Mg-doping concentration (1×10 19 and 3×10 19 cm -3 ) and thickness (5 and 8 nm). Device with p-GaN cap of 8-nm and Mg-doping of 3×10 19 cm -3 showed the lowest gate leakage current, highest on/off current ratio (1.02×10 6 ), highest breakdown voltage and least current collapse characteristics.