AlGaN/GaN MIS-HEMTs with a p-GaN Cap Layer. (28th December 2017)

• Record Type: Journal Article
• Authors: Hsu, Che-Ching; Shen, Pei-Chien; Zhong, Yi-Nan; Hsin, Yue-Ming
• Is Part Of: MRS advances. Volume 3:Number 3(2018)
• Page Start: 143
• Page End: 146
• Publication Date: 2017-12-28
• Subjects: devices, -- III-V, -- compound; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/adv.2017.626
• Languages: English
• ISSNs: 2059-8521

Abstract

ABSTRACT: In this study, AlGaN/GaN MIS-HEMTs with a p-GaN cap layer and ALD deposited Al2 O3 gate insulator were fabricated. Devices with two different thicknesses of p-GaN cap layers were investigated and compared. AlGaN/GaN MIS-HEMT with an 8-nm p-GaN cap showed a better DC characteristics than device with a 5-nm p-GaN cap. The drain current of 662.9 mA/mm, a high on/off current ratio of 2.67×10 9 and a breakdown voltage of 672 V were measured in device with an 8-nm p-GaN cap. In addition, lateral leakage current was investigated by using adjacent MIS gate structures with a separation of 3 μm to investigate the leakage current.