1. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022) Authors: Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng Journal: Journal of semiconductors Issue: Volume 43:Number 12(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022) Authors: Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng Journal: Journal of semiconductors Issue: Volume 43:Number 12(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022) Authors: Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng Journal: Journal of semiconductors Issue: Volume 43:Number 12(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022) Authors: Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng Journal: Journal of semiconductors Issue: Volume 43:Number 12(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Band alignment of ZnO-based nanorod arrays for enhanced visible light photocatalytic performance. Issue 42 (26th September 2022) Authors: Wan, Jing; Al-Baldawy, Aseel Shaker; Qu, Shanzhi; Lan, Jinshen; Ye, Xiaofang; Fei, Yuchen; Zhao, Jingtian; Wang, Ziyun; Hong, Rongdun; Guo, Shengshi; Huang, Shengli; Li, Shuping; Kang, Junyong Journal: RSC advances Issue: Volume 12:Issue 42(2022) Page Start: 27189 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Charge layer optimized 4H-SiC SACM avalanche photodiode with low breakdown voltage and high gain. (4th October 2019) Authors: Wu, Junkang; Zhang, Mingkun; Fu, Zhao; Hong, Rongdun; Zhang, Feng; Cai, Jiafa; Wu, Zhengyun Journal: Japanese journal of applied physics Issue: Volume 58:Number 10(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Effect of epitaxial layer's thickness on spectral response of 4H‐SiC p‐i‐n ultraviolet photodiodes. Issue 4 (1st February 2019) Authors: Hou, Yansong; Sun, Cunzhi; Wu, Junkang; Hong, Rongdun; Cai, Jiafa; Chen, Xiaping; Lin, Dingqu; Wu, Zhengyun Journal: Electronics letters Issue: Volume 55:Issue 4(2019) Page Start: 216 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Effect of interfacial dipole on heterogeneous ice nucleation. (14th July 2021) Authors: Lu, Hao; Xu, Quanming; Wu, Jianyang; Hong, Rongdun; Zhang, Zhisen Journal: Journal of physics Issue: Volume 33:Number 37(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. High performance silicon carbide avalanche‐p‐i‐n ultraviolet photodiode with dual operation models. Issue 17 (2nd August 2016) Authors: Zhang, Mingkun; Wang, Kang L.; Jiang, Hexin; Hong, Rongdun; Wu, Zhengyun Journal: Electronics letters Issue: Volume 52:Issue 17(2016) Page Start: 1474 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Separated-absorption-multiplication 4H-SiC avalanche photodiodes with adjustable responsivity and response time. (12th June 2015) Authors: Zhong, Jinxiang; Zhang, Zifeng; Wu, Zhengyun; Hong, Rongdun; Yang, Weifeng Journal: Japanese journal of applied physics Issue: Volume 54:Number 7(2015:Jul.) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗