High performance silicon carbide avalanche‐p‐i‐n ultraviolet photodiode with dual operation models. Issue 17 (2nd August 2016)

• Record Type: Journal Article
• Authors: Zhang, Mingkun; Wang, Kang L.; Jiang, Hexin; Hong, Rongdun; Wu, Zhengyun
• Is Part Of: Electronics letters. Volume 52:Issue 17(2016)
• Page Start: 1474
• Page End: 1476
• Publication Date: 2016-08-02
• Subjects: p‐i‐n photodiodes -- avalanche photodiodes -- silicon compounds -- wide band gap semiconductors -- p‐n junctions -- optoelectronic devices -- ultraviolet detectors; high performance silicon carbide avalanche‐p‐i‐n ultraviolet photodiode -- dual operation models -- quasiseparated‐absorption‐multiplication ultraviolet avalanche photodiode -- small‐area multiplication region -- large‐area absorption region -- p+nn− junction -- p+n− junction -- 4H‐SiC APD -- optoelectronic characteristics -- separate absorption -- multiplication APD -- ultraviolet detection -- SiC; Electronics -- Periodicals; 621.381
• DOI: 10.1049/el.2016.2025
• Languages: English
• ISSNs: 0013-5194

Abstract

Abstract : Silicon carbide‐based quasi‐separated‐absorption‐multiplication ultraviolet avalanche photodiode (APD) with a small‐area multiplication region and a large‐area absorption region, which comprises of a p + nn − junction encircled by a p + n − junction, is proposed, and its optoelectronic performance is modelled. The modelling results show a 4H‐SiC APD with high performance can be achieved. Moreover, when operated at a low reverse bias (e.g. 5.0 V), the photodiode has almost the same optoelectronic characteristics as the 4H‐SiC p‐i‐n photodiode. It is noted that the device has benefited advantages of both conventional separate absorption and multiplication APD and p‐i‐n photodiode in the wavelength range of ultraviolet detection, which enable the dual operation models of the device.