A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics. (1st December 2022)

• Record Type: Journal Article
• Authors: Wang, Xiaojie; Shen, Zhanwei; Zhang, Guoliang; Miao, Yuyang; Li, Tiange; Zhu, Xiaogang; Cai, Jiafa; Hong, Rongdun; Chen, Xiaping; Lin, Dingqu; Wu, Shaoxiong; Zhang, Yuning; Fu, Deyi; Wu, Zhengyun; Zhang, Feng
• Is Part Of: Journal of semiconductors. Volume 43:Number 12(2022)
• Publication Date: 2022-12-01
• Subjects: breakdown voltage -- specific on-resistance -- silicon carbide -- switching energy loss -- super-junction-shield (SS) -- trench gate MOSFET -- grounded (G) -- ungrounded (NG); Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/43/12/122802
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: A 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (UMOSFET) with semi-super-junction shielded structure (SS-UMOS) is proposed and compared with conventional trench MOSFET (CT-UMOS) in this work. The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET. In particular, the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed. The on-resistance of SS-UMOS with grounded (G) and ungrounded (NG) p-pillar is reduced by 52% (G) and 71% (NG) compared to CT-UMOS, respectively. Additionally, gate oxide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions. Thus, a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer. However, the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar, resulting in a large electric field of 2.7 MV/cm at the gate oxide layer. Moreover, the total switching loss of GSS-UMOS is 1.95 mJ/cm 2 and is reduced by 18% compared with CT-UMOS. On the contrary, the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three. The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications, and will provide a valuable idea for device design and circuit applications.