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2. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs. Issue 49 (23rd May 2016)

4. Electrical Activity of Extended Defects in Relaxed InxGa1−xAs Hetero-Epitaxial Layers. (19th February 2020)

5. Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents. Issue 86 (14th September 2015)

6. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (1st January 2015)

7. Nucleation Behavior of III/V Crystal Selectively Grown Inside Nano-Scale Trenches: The Influence of Trench Width. (22nd May 2015)