1. 0D–3D mixed-dimensional perovskite Cs4Pb(BrCl)6–CsPbBr2−xCl1+x films for stable and sensitive self-powered, high-temperature photodetectors. Issue 46 (16th November 2022) Authors: Ba, Yanshuang; Zhu, Weidong; Huangfu, Sunjie; Xi, He; Han, Tianjiao; Wang, Tianran; Chen, Dazheng; Zhang, Jincheng; Zhang, Chunfu; Hao, Yue Journal: Journal of materials chemistry Issue: Volume 10:Issue 46(2022) Page Start: 17628 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. 1.5-V-threshold-voltage Schottky barrier normally-off AlGaN/GaN high-electron-mobility transistors with fT/fmax of 41/125 GHz. (7th June 2017) Authors: Hou, Bin; Ma, Xiaohua; Yang, Ling; Zhu, Jiejie; Zhu, Qing; Chen, Lixiang; Mi, Minhan; Zhang, Hengshuang; Zhang, Meng; Zhang, Peng; Zhou, Xiaowei; Hao, Yue Journal: Applied physics express Issue: Volume 10:Number 7(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. 2022 roadmap on neuromorphic devices and applications research in China. Issue 4 (1st December 2022) Authors: Wan, Qing; Wan, Changjin; Wu, Huaqiang; Yang, Yuchao; Huang, Xiaohe; Zhou, Peng; Chen, Lin; Wang, Tian-Yu; Li, Yi; Xue, Kan-Hao; He, Yu-Hui; Miao, Xiang-Shui; Li, Xi; Xie, Chenchen; Chen, Houpeng; Song, Zhitang; Wang, Hong; Hao, Yue; Zhang, Junyao; Huang, Jia Journal: Neuromorphic computing and engineering Issue: Volume 2:Issue 4(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. 300°C operation of normally‐off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio. Issue 4 (1st February 2014) Authors: Xu, Zhe; Wang, Jinyan; Cai, Yong; Liu, Jingqian; Yang, Zhen; Li, Xiaoping; Wang, Maojun; Yang, Zhenchuang; Xie, Bin; Yu, Min; Wu, Wengang; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue Journal: Electronics letters Issue: Volume 50:Issue 4(2014) Page Start: 315 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. 3D hierarchical nanoarrays composed of NiCo–Te multilayer nanoneedles modified with Co1.29Ni1.71O4 for high-performance hybrid supercapacitors. (12th October 2021) Authors: Shi, Chao; Yang, Qingjun; Deng, Chengyu; Chen, Shengyu; Hao, Yue; Yan, Yongsheng; Wei, Maobin Journal: New journal of chemistry Issue: Volume 45:Number 42(2021) Page Start: 19795 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. 490 mA/mm drain current and 1.9 V threshold voltage enhancement-mode p-GaN HEMTs and high-temperature characteristics. (December 2021) Authors: Liu, Kai; Wang, Chong; Zheng, Xuefeng; Ma, Xiaohua; Huang, Zeyang; He, Yunlong; Li, Ang; Zhao, Yaopeng; Mao, Wei; Hao, Yue Journal: Solid-state electronics Issue: Volume 186(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. 60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior. (1st April 2023) Authors: Song, Xiufeng; Zhang, Jincheng; Wu, Yinhe; Zhao, Shenglei; Du, Lin; Feng, Qi; Zhang, Weiwei; Wang, Zhongxu; Wu, Feng; Liu, Shuang; Liu, Zhihong; Hao, Yue Journal: Applied physics express Issue: Volume 16:Number 4(2023) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. 71% PAE C‐band GaN power amplifier using harmonic tuning technology. Issue 17 (1st August 2014) Authors: Lu, Yang; Cao, Mengyi; Wei, Jiaxing; Zhao, Bochao; Ma, Xiaohua; Hao, Yue Journal: Electronics letters Issue: Volume 50:Issue 17(2014) Page Start: 1207 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. A 10-bit 250 MSPS charge-domain pipelined ADC with replica controlled PVT insensitive BCT circuit*Project supported by the National Natural Science Foundation of China (No. 61106027). (May 2015) Authors: Huang, Songren; Zhang, Hong; Chen, Zhenhai; Zhu, Shuang; Yu, Zongguang; Qian, Hongwen; Hao, Yue Journal: Journal of semiconductors Issue: Volume 36:Number 5(2015:May) Page Start: 222 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. A 18‐23 GHz power amplifier design using approximate optimal impedance region approach for satellite downlink. Issue 7 (12th April 2021) Authors: Yi, Chupeng; Lu, Yang; Zhao, Ziyue; Zhao, Bochao; Zhang, Hengshuang; Li, Peixian; Shi, Jiangyi; Ma, Xiaohua; Hao, Yue Journal: International journal of RF and microwave computer-aided engineering Issue: Volume 31:Issue 7(2021) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗