1. Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement. (7th April 2017) Authors: Han, Dong-Pyo; Shim, Jong-In; Shin, Dong-Soo Journal: Applied physics express Issue: Volume 10:Number 5(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
2. Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire. (22nd December 2021) Authors: Sone, Naoki; Jinno, Daiki; Miyamoto, Yoshiya; Okuda, Renji; Yamamura, Shiori; Jinno, Yukimi; Lu, Weifang; Han, Dong-Pyo; Okuno, Koji; Mizutani, Koichi; Nakajima, Satoru; Koyama, Jun; Ishimura, Satoshi; Mayama, Norihito; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Japanese journal of applied physics Issue: Volume 61:Number 1(2022) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
3. Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes. (16th November 2017) Authors: Han, Dong-Pyo; Shim, Jong-In; Shin, Dong-Soo Journal: Applied physics express Issue: Volume 10:Number 12(2017) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
4. Comparative study of III-phosphide- and III-nitride-based light-emitting diodes: understanding the factors limiting efficiency. (29th September 2021) Authors: Han, Dong-Pyo; Lee, Gyeong Won Journal: Semiconductor science and technology Issue: Volume 36:Number 11(2021) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
5. Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis. (14th February 2019) Authors: Han, Dong-Pyo; Yamamoto, Kengo; Ishimoto, Seiji; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Applied physics express Issue: Volume 12:Number 3(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
6. Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires. Issue 40 (8th October 2019) Authors: Lu, Weifang; Sone, Naoki; Goto, Nanami; Iida, Kazuyoshi; Suzuki, Atsushi; Han, Dong-Pyo; Iwaya, Motoaki; Tekeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Journal: Nanoscale Issue: Volume 11:Issue 40(2019) Page Start: 18746 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
7. Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes. Issue 7 (17th December 2019) Authors: Han, Dong-Pyo; Ishimoto, Seiji; Mano, Ryoya; Lu, Weifang; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
8. Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer. (January 2018) Authors: Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer Journal: Superlattices and microstructures Issue: Volume 113(2018) Page Start: 585 Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
9. Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition. Issue 7 (27th November 2019) Authors: Sone, Naoki; Suzuki, Atsushi; Murakami, Hideki; Goto, Nanami; Terazawa, Mizuki; Lu, Weifang; Han, Dong-Pyo; Iida, Kazuyoshi; Ohya, Masaki; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu Other Names: Shahedipour-Sandvik F. Shadi guestEditor.; Qhalid Fareed guestEditor. Journal: Physica status solidi Issue: Volume 217:Issue 7(2020) Page Start: n/a Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗
10. Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes. (28th January 2019) Authors: Usman, Muhammad; Mushtaq, Urooj; Zheng, Dong-Guang; Han, Dong-Pyo; Muhammad, Nazeer Journal: Materials research express Issue: Volume 6:Number 4(2019) Page Start: Record Type: Journal Article View Content: Available online (eLD content is only available in our Reading Rooms) ↗