Efficiency improvement of green light-emitting diodes by employing all-quaternary active region and electron-blocking layer. (January 2018)

• Record Type: Journal Article
• Authors: Usman, Muhammad; Saba, Kiran; Han, Dong-Pyo; Muhammad, Nazeer
• Is Part Of: Superlattices and microstructures. Volume 113(2018)
• Page Start: 585
• Page End: 591
• Publication Date: 2018-01
• Subjects: Superlattices as materials -- Periodicals; Microstructure -- Periodicals; Semiconductors -- Periodicals; Superréseaux -- Périodiques; Microstructure (Physique) -- Périodiques; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.spmi.2017.11.046
• Languages: English
• ISSNs: 0749-6036

Abstract

Abstract: High efficiency of green GaAlInN-based light-emitting diode (LED) has been proposed with peak emission wavelength of ∼510 nm. By introducing quaternary quantum well (QW) along with the quaternary barrier (QB) and quaternary electron blocking layer (EBL) in a single structure, an efficiency droop reduction of up to 29% has been achieved in comparison to the conventional GaN-based LED. The proposed structure has significantly reduced electrostatic field in the active region. As a result, carrier leakage has been minimized and spontaneous emission rate has been doubled. Highlights: The proposed light-emitting diode structure demonstrates improved efficiency in light-emitting diodes. Improving the efficiency of light-emitting diodes is always a need of the community and our results demonstrate the same. The proposed structure is one of its kind and is presented as a solution to 'green gap' issue faced by the community.