Investigation of optoelectronic characteristics of indium composition in InGaN-based light-emitting diodes. (28th January 2019)

• Record Type: Journal Article
• Authors: Usman, Muhammad; Mushtaq, Urooj; Zheng, Dong-Guang; Han, Dong-Pyo; Muhammad, Nazeer
• Is Part Of: Materials research express. Volume 6:Number 4(2019)
• Publication Date: 2019-01-28
• Subjects: light-emitting diode -- indium -- numerical simulation -- quantum well; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/aaff15
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: We report a detailed numerical analysis of the optoelectronic characteristics of the indium composition on the device performance. The analysis includes discussion of the band-bending, built-in field, carrier confinement and emission spectra. The quantum well tilts strongly with increasing composition of indium. In addition, as the indium concentration increases in the active region, the spontaneous emission decreases and its full width at half maximum increases gradually.