Author/Creator: Grundmann, Marius - British Library Electronic Legal Deposit Catalogue-Journal Issues and Articles Search Results

Author/Creator Grundmann, Marius

1. A DLTS study of a ZnO microwire, a thin film and bulk material. Issue 1633 (2014)

Authors:: Schmidt, Florian; Schlupp, Peter; Müller, Stefan; Dietrich, Christof Peter; von Wenckstern, Holger; Grundmann, Marius; Heinhold, Robert; Kim, Hyung-Suk; Allen, Martin Ward
Journal:: MRS proceedings
Issue:: Issue 1633:(2014)
Page Start:: 51
Record Type:: Journal Article
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2. A Most General and Facile Recipe for the Calculation of Heteroepitaxial Strain. Issue 12 (12th August 2020)

Authors:: Grundmann, Marius
Journal:: Physica status solidi
Issue:: Volume 257:Issue 12(2020)
Page Start:: n/a
Record Type:: Journal Article
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3. Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room temperature. Issue 3 (15th January 2019)

Authors:: Li, Zhijie; Li, Hao; Wu, Zhonglin; Wang, Mingkui; Luo, Jingting; Torun, Hamdi; Hu, PingAn; Yang, Chang; Grundmann, Marius; Liu, Xiaoteng; Fu, YongQing
Journal:: Materials horizons
Issue:: Volume 6:Issue 3(2019)
Page Start:: 470
Record Type:: Journal Article
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4. Al Composition Dependence of Band Offsets for SiO2 on α-(AlxGa1−x)2O3. (25th November 2021)

Authors:: Xia, Xinyi; Fares, Chaker; Ren, Fan; Hassa, Anna; von Wenckstern, Holger; Grundmann, Marius; Pearton, S. J.
Journal:: ECS journal of solid state science and technology
Issue:: Volume 10:Number 11(2021)
Page Start:
Record Type:: Journal Article
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5. All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals. (15th January 2015)

Authors:: Schlupp, Peter; Schein, Friedrich‐Leonhard; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 1:Number 1/2(2015:Jan.)
Page Start:: n/a
Record Type:: Journal Article
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6. All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride. (18th March 2021)

Authors:: Reinhardt, Anna; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 7:Number 4(2021)
Page Start:: n/a
Record Type:: Journal Article
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7. All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing. (11th September 2020)

Authors:: Lahr, Oliver; Bar, Michael S.; von Wenckstern, Holger; Grundmann, Marius
Journal:: Advanced Electronic Materials
Issue:: Volume 6:Number 10(2020)
Page Start:: n/a
Record Type:: Journal Article
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8. Aluminium‐ and gallium‐doped homoepitaxial ZnO thin films: Strain‐engineering and electrical performance. Issue 7 (17th April 2015)

Authors:: Lorenz, Michael; Weiss, Tobias; Schmidt, Florian; von Wenckstern, Holger; Grundmann, Marius
Journal:: Physica status solidi
Issue:: Volume 212:Issue 7(2015:Jul.)
Page Start:: 1440
Record Type:: Journal Article
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9. Aluminium‐ and gallium‐doped homoepitaxial ZnO thin films: Strain‐engineering and electrical performance. Issue 7 (17th April 2015)

Authors:: Lorenz, Michael; Weiss, Tobias; Schmidt, Florian; von Wenckstern, Holger; Grundmann, Marius
Journal:: Physica status solidi
Issue:: Volume 212:Issue 7(2015:Jul.)
Page Start:: 1440
Record Type:: Journal Article
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10. An aberration-corrected STEM study of structural defects in epitaxial GaN thin films grown by ion beam assisted MBE. (June 2015)

Authors:: Poppitz, David; Lotnyk, Andriy; Gerlach, Jürgen W.; Lenzner, Jörg; Grundmann, Marius; Rauschenbach, Bernd
Journal:: Micron
Issue:: Volume 73(2015:Jun.)
Page Start:: 1
Record Type:: Journal Article
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