Aluminium‐ and gallium‐doped homoepitaxial ZnO thin films: Strain‐engineering and electrical performance. Issue 7 (17th April 2015)

• Record Type: Journal Article
• Authors: Lorenz, Michael; Weiss, Tobias; Schmidt, Florian; von Wenckstern, Holger; Grundmann, Marius
• Is Part Of: Physica status solidi. Volume 212:Issue 7(2015:Jul.)
• Page Start: 1440
• Page End: 1447
• Publication Date: 2015-04-17
• Subjects: Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201431929
• Languages: English
• ISSNs: 1862-6300

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <sec id="pssa201431929-sec-0001" sec-type="section"> <p>Aluminium‐ and gallium‐doped ZnO thin films with nominal source target compositions of <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgj1m9pkx82" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley::media:pssa201431929:pssa201431929-math-0001" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>0.1</mml:mn></mml:math></alternatives></inline-formula> and <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgj1m9pkx9m" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley::media:pssa201431929:pssa201431929-math-0002" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>1</mml:mn><mml:mspace width="thinmathspace" /><mml:mi mathvariant="normal">wt</mml:mi><mml:mo>%</mml:mo></mml:math></alternatives></inline-formula> were grown homoepitaxially and in‐plane lattice matched on <italic>c</italic>‐plane ZnO <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgj1m9pkx6z" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley::media:pssa201431929:pssa201431929-math-0003" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo stretchy="false">(</mml:mo><mml:mn>00</mml:mn><mml:mo>.</mml:mo><mml:mrow><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover></mml:mrow><mml:mo stretchy="false">)</mml:mo></mml:math></alternatives></inline-formula> single crystalline substrates. In dependence on dopant concentration and oxygen partial pressure during growth we found compressive or tensile out‐of‐plane epitaxial strain up to <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgj1m9pkx7h" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley::media:pssa201431929:pssa201431929-math-0004" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>0.1</mml:mn><mml:mo>%</mml:mo></mml:math></alternatives></inline-formula>. Electrical investigations showed that the conductivity of the substrates alters transport properties at room temperature. Correct interpretation requires variable temperature Hall effect measurements. These reveal, that besides the contributions of the substrate and the deposited thin film an additional conduction channel, likely located at the surface of the samples must be considered to explain and model the temperature dependence of the free electron concentration and their mobility.</p> </sec> </abstract>