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2. Corrigendum: Surface termination and Schottky-barrier formation of In4Se3(001) (2020 Semicond. Sci. Technol.35 065009). (20th May 2021)

3. Surface termination and Schottky-barrier formation of In4Se3(001). (6th May 2020)

5. The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3. (22nd April 2020)